s y mbol v ds v gs i dm t j , t stg symbol typ max t 10s 50 60 steady-state 84 100 steady-state r jl 28 34 1.3 mosfet -4.5 -3.5 2 maximum junction-to-ambient a d c/w units -20 8 -25 a p d c t a =70c drain-source voltage i d pulsed drain current c power dissipation b t a =25c thermal characteristics -55 to 150 continuous drain current t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v gate-source voltage c/w parameter w maximum junction-to-lead c/w units maximum junction-to-ambient a junction and storage temperature range r ja parameter AON4805L features v ds (v) = -20v i d = -4.5a (v gs = -4.5v) r ds(on) < 65m ? (v gs = -4.5v) r ds(on) < 85m ? (v gs = -2.5v) r ds(on) < 115m ? (v gs = -1.8v) general description the AON4805L uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltage as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. -rohs compliant -halogen free g2 s2 g1 s1 d2 d2 d1 d1 1 2 3 4 8 7 6 5 g1 d1 s1 g2 d2 s2 pin 1 dfn 3x2 top view bottom view dual p-channel enhancement mode field effect transistor www.freescale.net.cn 1/5
symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.5 -0.67 -1 v i d(on) -25 a 53 65 t j =125c 72 90 66 85 m ? 88 115 m ? g fs 15 s v sd -0.7 -1 v i s -1.7 a c iss 560 670 pf c oss 80 pf c rss 70 pf r g 15 23 ? q g 8.5 10 nc q gs 1.2 nc q gd 2.1 nc t d(on) 7.2 ns t r 36 ns t d(off) 53 ns t f 56 ns t rr 37 45 ns q rr 27 nc 12 maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-10v, f=1mhz gate drain charge turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =2.2 ? , r gen =6 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-4.5a gate source charge m ? v gs =-2.5v, i d =-3a i s =-1a,v gs =0v v ds =-5v, i d =-4.5a v gs =-1.8v, i d =-2a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-20v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-4.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-4.5a reverse transfer capacitance i f =-4.5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c: ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. rev0 : july 2008 AON4805L www.freescale.net.cn 2/5
typical electrical and thermal characteristic s 12 0 5 10 15 20 25 012345 -v ds (volts) figure 1: on-region characteristics(note e) -i d (a) v gs =-1.5v -2.0v -2.5v -4.5v -3.0v 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics(note e) -i d (a) 25c 125c v ds =-5v 40 60 80 100 120 140 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage(note e) r ds(on) (m ? ) v gs =-1.8v v gs =-2.5v v gs =-4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics(note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature(note e) normalized on-resistance v gs =-4.5v i d =-4.5a v gs =-2.5v i d =-3a 40 60 80 100 120 140 160 180 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage(note e) r ds(on) (m ? ) i d =-4.5a 25c 125c v gs =-1.8v i d =-2a AON4805L www.freescale.net.cn 3/5
typical electrical and thermal characteristic s 12 0 1 2 3 4 5 0246810 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.1 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to - ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ja normalized transient thermal resistance v ds =-10v i d =-4.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =110c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 1s AON4805L www.freescale.net.cn 4/5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds tt t t t t 90% 10% r on d(off) f off d(on) AON4805L www.freescale.net.cn 5/5
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